A simple tool for quality evaluation of the microcrystalline silicon prepared at high growth rate

Thin Solid Films

Volumn 516, Issue 15, 2008, Pages 4966-4969

  Kocka J ^a   Mates, T ^a   Ledinsky M ^a   Stuchlikova H ^a   Stuchlik J ^a   Fejfar, A ^a  

^a INSTITUTE OF PHYSICS   (Czech Republic)

Author keywords

Deposition process; High growth rate; Microcrystalline silicon; Quality evaluation

Indexed keywords

CHEMICAL VAPOR DEPOSITION; DEPOSITION; GROWTH RATE; PHOTOCURRENTS; THIN FILMS; TRANSPORT PROPERTIES;

HIGH GROWTH RATE; PHOTOGENERATED CARRIERS; QUALITY EVALUATION; SURFACE PHOTOVOLTAGE METHODS;

MICROCRYSTALLINE SILICON;

EID: 42649117816     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2007.09.052     Document Type: Article

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