Preparation of microcrystalline silicon films at ultra high-rate of 10 nm/s using high-density plasma

Journal of Non-Crystalline Solids

Volumn 338-340, Issue 1 SPEC. ISS., 2004, Pages 42-46

  Niikura, Chisato ^a   Kondo, Michio ^a   Matsuda, Akihisa ^a  

^a NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CATHODES; CRYSTALLINE MATERIALS; MIXTURES; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; PLASMAS; THERMAL EFFECTS; THIN FILMS;

FILM GROWTH SURFACE; HIGH PRESSURE DEPLETION; MICROCRYTALLINE SILICON FILMS;

SILICON;

EID: 2942590651     PISSN: 00223093     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jnoncrysol.2004.02.018     Document Type: Conference Paper

References (6)

1. Kondo M., Nishimoto T., Takai M., Suzuki S., Nasuno Y., Matsuda A. Solar Energy Mater. Solar Cells. 78:2003;543.
2. Guo L., Kondo M., Fukawa M., Saitoh K., Matsuda A. Jpn. J. Appl. Phys. 37:1998;L1116.
3. Fukawa M., Suzuki S., Guo L., Kondo M., Matsuda A. Solar Energy Mater. Solar Cells. 66:2001;217.
4. C. Niikura, M. Kondo, A. Matsuda, Proc. WCPEC3, Osaka, 2003.
5. C. Niikura, N. Itagaki, M. Kondo, Y. Kawai, A. Matsuda, Thin Solid Films, in press.
6. Ganguly G., Matsuda A. Phys. Rev. B. 47:1993;3661.