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Solid State Phenomena

Volumn 80-81, Issue , 2001, Pages 213-224

Microcrystalline silicon - relation between transport and microstructure

(8) Koccka J a Stuchlikova H a Stuchlik J a Rezek, B a Svrcek V a Fojtiik P a Pelant, I a Fejfar, A a

a INSTITUTE OF PHYSICS (Czech Republic)

Author keywords

AC and DC conductivity; Diffusion length; Microcrystalline silicon; Microstructure; Transport properties

Indexed keywords

ACTIVATION ENERGY; ANISOTROPY; ATOMIC FORCE MICROSCOPY; CRYSTAL MICROSTRUCTURE; DIFFUSION; GRAIN SIZE AND SHAPE; TRANSPORT PROPERTIES;

MICROCRYSTALLINE GROWTH; MICROCRYSTALLINE SILICON; PHOTOCARRIER GRATING TECHNIQUES; SURFACE PHOTOVOLTAGE;

SILICON;

EID: 0034820226 PISSN: 10120394 EISSN: None Source Type: Book Series
DOI: None Document Type: Conference Paper

Times cited : (20)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.