Properties of microcrystalline silicon prepared at high growth rate

Conference Record of the 2006 IEEE 4th World Conference on Photovoltaic Energy Conversion, WCPEC-4

Volumn 2, Issue , 2006, Pages 1600-1603

  Kocka, J ^a   Mates, T ^a   Ledinsky M ^a   Stuchlikova H ^a   Stuchlik J ^a   Fejfar, A ^a  

^a INSTITUTE OF PHYSICS   (Czech Republic)

Author keywords

[No Author keywords available]

Indexed keywords

FILM GROWTH; HYDROGEN; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SOLAR CELLS; THIN FILMS; TRANSPORT PROPERTIES;

AMBIPOLAR DIFFUSION LENGTH; SILANE RATIOS; SURFACE PHOTOVOLTAGE METHOD (SPV);

MICROCRYSTALLINE SILICON;

EID: 41749084142     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/WCPEC.2006.279792     Document Type: Conference Paper

References (9)

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2. Ch. Niikura, M. Kondo and A. Matsuda, "Preparation of microcrystalline silicon films at ultra high-rate of 10 nm/s using high-density plasma", J. of Non-Cryst. Sol. 338-340, 2004, pp. 42-46.
3. J. Kocka, T. Mates, M. Ledinský, K. Luterová, H. Stuchlíková, J. Stuchlík, A. Porubá, A. Fejfar, "Properties of microcrystalline silicon prepared at high growth rate and the new way how to increase nucleation", 3DV.3.30, Proc.of the 20th EPVSEC, Barcelona, Spain, 2005.
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8. J. Kocka, H. Stuchlíková, J. Stuchlík, B. Rezek, V. Švrcek, P. Fojtík, I. Pelant, A. Fejfar, "Microcrystalline silicon - Relation between Transport and Microstructure (INVITED)", Solid State Phenomena 80-81, 2001, pp. 213.
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