SCOPUS 정보 검색 플랫폼

Volumn 299, Issue 302, 2002, Pages 395-399

Importance of the transport isotropy in μc-Si:H thin films for solar cells deposited at low substrate temperatures

(11) Svrcek V a Fejfar, A a Fojtik P a Mates, T a Poruba, A a Stuchlikova H a Pelant, I a Kocka J a Nasuno, Y b Kondo, M b Matsuda, A b

a INSTITUTE OF PHYSICS (Czech Republic)

b NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL STRUCTURE; DEPOSITION; DIFFUSION IN SOLIDS; ELECTRIC CONDUCTIVITY; LOW TEMPERATURE EFFECTS; SEMICONDUCTING SILICON COMPOUNDS; SILICON SOLAR CELLS; SUBSTRATES;

TRANSPORT ISOTROPY;

THIN FILMS;

EID: 4243948846 PISSN: 00223093 EISSN: None Source Type: Journal
DOI: 10.1016/S0022-3093(01)01014-6 Document Type: Article

Times cited : (11)

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