-
5
-
-
42549084467
-
-
Intel 2006 Meet the world's first 45nm processor (January 2006) See, for example http://www.intel.com/technology/silicon/45nm_technology.htm
-
(2006)
Meet the World's First 45nm Processor
-
-
-
8
-
-
0000361018
-
-
Lee B H, Kang L, Nieh R, Qi W J and Lee J C 2000 Appl. Phys. Lett. 76 1926
-
(2000)
Appl. Phys. Lett.
, vol.76
, Issue.14
, pp. 1926
-
-
Lee, B.H.1
Kang, L.2
Nieh, R.3
Qi, W.J.4
Lee, J.C.5
-
9
-
-
79955989448
-
-
Bastos K P, Morais J, Miotti L, Pezzi R P, Soares G V, Baumvol I J R, Hegde R I, Tseng H H and Tobin P J 2002 Appl. Phys. Lett. 81 1669
-
(2002)
Appl. Phys. Lett.
, vol.81
, Issue.9
, pp. 1669
-
-
Bastos, K.P.1
Morais, J.2
Miotti, L.3
Pezzi, R.P.4
Soares, G.V.5
Baumvol, I.J.R.6
Hegde, R.I.7
Tseng, H.H.8
Tobin, P.J.9
-
10
-
-
0000162605
-
-
Gusev E P, Copel M, Cartier E, Baumvol I J R, Krug C and Gribelyuk M A 2000 Appl. Phys. Lett. 76 176
-
(2000)
Appl. Phys. Lett.
, vol.76
, Issue.2
, pp. 176
-
-
Gusev, E.P.1
Copel, M.2
Cartier, E.3
Baumvol, I.J.R.4
Krug, C.5
Gribelyuk, M.A.6
-
11
-
-
0035971779
-
-
Copel M, Cartier E, Gusev E P, Guha S, Bojarczuk N and Poppeller M 2001 Appl. Phys. Lett. 78 2670
-
(2001)
Appl. Phys. Lett.
, vol.78
, Issue.18
, pp. 2670
-
-
Copel, M.1
Cartier, E.2
Gusev, E.P.3
Guha, S.4
Bojarczuk, N.5
Poppeller, M.6
-
12
-
-
31144437297
-
-
Hong Y E, Kim Y S, Do K, Lee D, Ko D H, Ku J H and Kim H 2005 J. Vac. Sci. Technol. A 23 1413
-
(2005)
J. Vac. Sci. Technol.
, vol.23
, Issue.5
, pp. 1413
-
-
Hong, Y.E.1
Kim, Y.S.2
Do, K.3
Lee, D.4
Ko, D.H.5
Ku, J.H.6
Kim, H.7
-
13
-
-
0036863349
-
-
Zhu W J, Tamagawa T, Gibso M, Furukawa T and Ma T P 2002 IEEE Electron Device Lett. 23 649
-
(2002)
IEEE Electron Device Lett.
, vol.23
, Issue.11
, pp. 649
-
-
Zhu, W.J.1
Tamagawa, T.2
Gibso, M.3
Furukawa, T.4
Ma, T.P.5
-
14
-
-
79955987885
-
-
Yu H Y, Li M F, Cho B J, Yeo C C, Joo M S, Kwong D L, Pan J S, Ang C H, Zheng J Z and Ramanathan S 2002 Appl. Phys. Lett. 81 376
-
(2002)
Appl. Phys. Lett.
, vol.81
, Issue.2
, pp. 376
-
-
Yu, H.Y.1
Li, M.F.2
Cho, B.J.3
Yeo, C.C.4
Joo, M.S.5
Kwong, D.L.6
Pan, J.S.7
Ang, C.H.8
Zheng, J.Z.9
Ramanathan, S.10
-
16
-
-
79956027667
-
-
Yu H Y, Wu N, Li M F, Zhu C X, Cho B J, Kwong D L, Tung C H, Pan J S, Chai J W, Wang W D, Chi D Z, Ang C H, Zheng J Z and Ramanathan S 2002 Appl. Phys. Lett. 81 3618
-
(2002)
Appl. Phys. Lett.
, vol.81
, Issue.19
, pp. 3618
-
-
Yu, H.Y.1
Wu, N.2
Li, M.F.3
Zhu, C.X.4
Cho, B.J.5
Kwong, D.L.6
Tung, C.H.7
Pan, J.S.8
Chai, J.W.9
Wang, W.D.10
Chi, D.Z.11
Ang, C.H.12
Zheng, J.Z.13
Ramanathan, S.14
-
17
-
-
1242284595
-
-
Chang H S, Hwang H, Cho M, Kim H K and Moon D W 2004 J. Vac. Sci. Technol. A 22 165
-
(2004)
J. Vac. Sci. Technol.
, vol.22
, Issue.1
, pp. 165
-
-
Chang, H.S.1
Hwang, H.2
Cho, M.3
Kim, H.K.4
Moon, D.W.5
-
18
-
-
42549093790
-
-
2 film significantly suppresses the formation of interfacial oxide when the as-deposited film is annealed at 800 °C and at ambient condition
-
-
-
Li, Q.1
Al, E.2
-
21
-
-
23244460838
-
-
Perdew J P, Chevary J A, Vosko S H, Jackson K A, Pederson M R, Singh D J and Fiolhais C 1992 Phys. Rev. B 46 6671
-
(1992)
Phys. Rev.
, vol.46
, Issue.11
, pp. 6671
-
-
Perdew, J.P.1
Chevary, J.A.2
Vosko, S.H.3
Jackson, K.A.4
Pederson, M.R.5
Singh, D.J.6
Fiolhais, C.7
-
26
-
-
42549133751
-
-
http://theory.cm.utexas.edu/vtsttools/
-
-
-
-
32
-
-
33746634406
-
-
Goncharova L V, Dalponte M, Starodub D G, Gustafsson T, Garfunkel E, Lysaght P S, Foran B, Barnett J and Bersuker G 2006 Appl. Phys. Lett. 89 044108
-
(2006)
Appl. Phys. Lett.
, vol.89
, pp. 044108
-
-
Goncharova, L.V.1
Dalponte, M.2
Starodub, D.G.3
Gustafsson, T.4
Garfunkel, E.5
Lysaght, P.S.6
Foran, B.7
Barnett, J.8
Bersuker, G.9
-
33
-
-
34047117788
-
-
Zhao M, Nakajima K, Suzuki M, Kimura K, Uematsu M, Torii K, Kamiyama S, Nara Y, Watanabe H, Shiraishi K, Chikyow T and Yamada K 2007 Appl. Phys. Lett. 90 133510
-
(2007)
Appl. Phys. Lett.
, vol.90
, Issue.13
, pp. 133510
-
-
Zhao, M.1
Nakajima, K.2
Suzuki, M.3
Kimura, K.4
Uematsu, M.5
Torii, K.6
Kamiyama, S.7
Nara, Y.8
Watanabe, H.9
Shiraishi, K.10
Chikyow, T.11
Yamada, K.12
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