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Volumn 20, Issue 13, 2008, Pages

Al-induced reduction of the oxygen diffusion in HfO2: An ab initio study

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM; CHEMICAL BONDS; DIFFUSION BARRIERS; HAFNIUM COMPOUNDS; REDUCTION;

EID: 42549145606     PISSN: 09538984     EISSN: 1361648X     Source Type: Journal    
DOI: 10.1088/0953-8984/20/13/135206     Document Type: Article
Times cited : (7)

References (33)
  • 5
    • 42549084467 scopus 로고    scopus 로고
    • Intel 2006 Meet the world's first 45nm processor (January 2006) See, for example http://www.intel.com/technology/silicon/45nm_technology.htm
    • (2006) Meet the World's First 45nm Processor
  • 18
    • 42549093790 scopus 로고    scopus 로고
    • 2 film significantly suppresses the formation of interfacial oxide when the as-deposited film is annealed at 800 °C and at ambient condition
    • Li, Q.1    Al, E.2
  • 26
    • 42549133751 scopus 로고    scopus 로고
    • http://theory.cm.utexas.edu/vtsttools/


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.