Enhancing etch resistance of hydrogen silsesquioxane via postdevelop electron curing

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 24, Issue 6, 2006, Pages 3157-3161

  Yang, Joel K W ^a   Anant, Vikas ^a   Berggren, Karl K ^a  

^a MASSACHUSETTS INSTITUTE OF TECHNOLOGY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRON BEAMS; NANOSTRUCTURED MATERIALS; OPTICAL RESOLVING POWER; REACTIVE ION ETCHING; SUPERCONDUCTING MATERIALS; SURFACE ROUGHNESS;

ELECTRON-BEAM EXPOSURE; ETCH MASKS; ETCH RESISTANCE; SUPERCONDUCTING NANOWIRES;

PHOTORESISTS;

EID: 33845253867     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.2395949     Document Type: Article

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