Effect of H2 on the etch profile of InP/InGaAsP alloys in Cl2/Ar/H2 inductively coupled plasma reactive ion etching chemistries for photonic device fabrication

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 20, Issue 4, 2002, Pages 1327-1330

  Rommel, Sean L ^a   Jang, Jae Hyung ^a   Lu, Wu ^a   Cueva, Gabriel ^a   Zhou, Ling ^a   Adesida, Ilesanmi ^a   Pajer, Gary ^b   Whaley, Ralph ^b   Lepore, Allen ^b   Schellanbarger, Zane ^b   Abeles, Joseph H ^b  

^a University of Illinois at Urbana Champaign   (United States)

^b SARNOFF CORPORATION   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ARGON; CHLORINE; COMPOSITION EFFECTS; ELECTRONIC EQUIPMENT MANUFACTURE; HYDROGEN; INDUCTIVELY COUPLED PLASMA; REACTIVE ION ETCHING; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING INDIUM COMPOUNDS; WAVEGUIDES;

ETCH PROFILE ENGINEERING; ETCH RATES; INDUCTIVELY COUPLED PLASMA REACTIVE ION ETCHING CHEMISTRIES; PHOTONIC DEVICE FABRICATION;

HETEROJUNCTIONS;

EID: 0035982530     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.1486232     Document Type: Conference Paper

References (10)