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1
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0032307390
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Characteristics of a 1200V PT IGBT with trench gate and local lifetime control
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Motto, E.1
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2
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0033325832
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3rd generation of 1200V IGBT modules
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Hierholzer, M., Laska, T., Loddenkotter, M., Minzer, M., Pfirsch, F., Schaffer, C., Schmidt, T., "3rd Generation of 1200V IGBT Modules," IEEE-IAS Conference Record, pp. 1787-1792, 1999.
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3
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0030674985
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Improvement of the diode characteristics using emitter-controlled principles (EMCON-diode)
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4
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0033309994
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1200V 50A trench oxide PIN schottky (TOPS) diode
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Chang, H.-R., Winterhalter, C., Gupta, R., Humphrey, K., "1200V 50A Trench Oxide PIN Schottky (TOPS) Diode," IEEE-IAS Conference Record, pp. 353-358, 1999.
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Chang, H.-R.1
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5
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0029324460
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High voltage 4H-SiC schottky barrier diodes
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Raghunathan, R.1
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6
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0034501155
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Optimized 1200V. silicon trench IGBTs with silicon carbide schottky diodes
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October 8
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C. Winterhalter, H.R. Chang and R.N. Gupta "Optimized 1200V. Silicon Trench IGBTs with Silicon Carbide Schottky Diodes" IEEE-IAS Conference Record, October 8, 2000.
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Winterhalter, C.1
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7
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27744473499
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Static and dynamic characterization of 20A, 600V SiC MOS-enhanced JFET
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Oct. 2- 6 Lyon, France
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E. Hanna, H.-R. Chang, R.V. Radun, Q. Zhang, M. Gomez, X. Li and C. Bui, "Static and dynamic characterization of 20A, 600V SiC MOS-enhanced JFET," International Conference on Silicon Carbide and Related Materials Tech Digest, Oct. 2- 6 (2003), Lyon, France
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Hanna, E.1
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8
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0041657448
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Development and demonstration of silicon carbide (SiC) motor drive inverter modules
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Acapulco, Mexico
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H.-R. Chang, E. Hanna and A.V. Radun, "Development and demonstration of silicon carbide (SiC) motor drive inverter modules," PESC2003 proceeding, Acapulco, Mexico.
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PESC2003 Proceeding
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Chang, H.-R.1
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9
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Demonstration of silicon carbide (SiC)-based motor drive
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Nov. 2-6, Roanoke, Virginia
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H.-R. Chang, E. Hanna and A.V. Radun, "Demonstration of silicon carbide (SiC)-based motor drive," IECON 2003, Nov. 2-6, Roanoke, Virginia.
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IECON 2003
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Chang, H.-R.1
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