Silicon carbide PiN and Merged PiN Schottky power diode models implemented in the saber circuit simulator

PESC Record - IEEE Annual Power Electronics Specialists Conference

Volumn 4, Issue , 2001, Pages 2103-2108

  McNutt, T ^a   Hefner, A ^a   Mantooth, A ^a   Duliere, J ^a   Berning, D ^a   Singh, R ^a  

^a UNIVERSITY OF ARKANSAS   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

MERGED PIN SCHOTTKY (MPS) POWER DIODES;

ELECTRIC FIELD EFFECTS; ELECTRIC NETWORK ANALYSIS; SCHOTTKY BARRIER DIODES; SEMICONDUCTOR DEVICE MODELS; SEMICONDUCTOR DOPING; SEMICONDUCTOR MATERIALS; SILICON CARBIDE; SWITCHING SYSTEMS; THERMAL EFFECTS;

SEMICONDUCTOR DIODES;

EID: 0034794228     PISSN: 02759306     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/PESC.2001.954431     Document Type: Conference Paper

References (6)

1. SiC power diodes provide breakthrough performance for a wide range of applications
2. A unified diode model for circuit simulation
3. Electrothermal simulation of 4H-SiC power devices
4. 1500 V, 4 Amp 4H-SiC JBD diodes
5. Silicon carbide merged PiN Schottky diode switching characteristics and evaluation for power supply applications