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Volumn 30, Issue 4, 2005, Pages 293-298

Silicon carbide power field-effect transistors

(1)  Zhao, Jian H a  

a NONE

Author keywords

Field effect transistors; Metal oxide semiconductor field effect transistors; MOSFETs; Power switching; Silicon carbide; Vertical junction field effect transistors; VJFETs

Indexed keywords

FIELD EFFECT TRANSISTORS; HIGH TEMPERATURE EFFECTS; MOSFET DEVICES; SEMICONDUCTOR JUNCTIONS; SWITCHES;

EID: 33645817591     PISSN: 08837694     EISSN: None     Source Type: Journal    
DOI: 10.1557/mrs2005.76     Document Type: Article
Times cited : (17)

References (28)
  • 1
    • 85039323121 scopus 로고    scopus 로고
    • "Field-controlled high-power semiconductor devices," U.S. Patent No. 6,107,649 (August 22), and U.S. Patent No. 6,423,986 (July 23)
    • J.H. Zhao, "Field-controlled high-power semiconductor devices," U.S. Patent No. 6,107,649 (August 22, 2000) and U.S. Patent No. 6,423,986 (July 23, 2002).
    • (2000)
    • Zhao, J.H.1
  • 21
    • 85039335929 scopus 로고    scopus 로고
    • edited by R. Madar, J. Camassel, and E. Blanquet (Trans Tech, Zurich)
    • Silicon Carbide and Related Materials 2003, Proc. 10th ICSCRM, edited by R. Madar, J. Camassel, and E. Blanquet (Trans Tech, Zurich, 2004) p. 1261.
    • (2004) Silicon Carbide and Related Materials 2003, Proc. 10th ICSCRM , pp. 1261
  • 25
    • 85039320637 scopus 로고    scopus 로고
    • unpublished manuscript
    • J.H. Zhao, J. Wu, and X. Wang, et al., unpublished manuscript.
    • Zhao, J.H.1    Wu, J.2    Wang, X.3
  • 27
    • 85039337253 scopus 로고    scopus 로고
    • accessed February 2005
    • Revised figure based on http://www.ecn.purdue.edu/WBG/Data_Bank/ Best_Performance.html (accessed February 2005).


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.