Power conversion with SiC devices at extremely high ambient temperatures

PESC Record - IEEE Annual Power Electronics Specialists Conference

Volumn 2005, Issue , 2005, Pages 2030-2035

  Funaki, T ^a   Balda, J C ^b   Junghans, J ^b   Kashyap, A S ^b   Barlow, F D ^b   Mantooth, H A ^b   Kimoto, T ^a   Hikihara, T ^a  

^a KYOTO UNIVERSITY   (Japan)

^b University of Arkansas   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC INDUCTORS; ELECTRONICS PACKAGING; JUNCTION GATE FIELD EFFECT TRANSISTORS; SCHOTTKY BARRIER DIODES; SILICON CARBIDE; THERMAL EFFECTS;

BUCK CONVERTERS; HIGH TEMPERATURE INDUCTORS; POWER CONVERSION; THERMALLY STABLE PACKAGES;

DC-DC CONVERTERS;

EID: 33847766468     PISSN: 02759306     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/PESC.2005.1581911     Document Type: Conference Paper

References (10)

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