Degradation of SiC high-voltage pin diodes

MRS Bulletin

Volumn 30, Issue 4, 2005, Pages 305-307

  Ha, Seoyong ^a   Bergman, J R ^a  

^a NONE

Author keywords

Compound semiconductors; Defects; Degradation; Recombination enhanced defect reaction; Silicon carbide

Indexed keywords

DEGRADATION; ELECTRIC POTENTIAL; NUCLEATION; POWER ELECTRONICS; SILICON CARBIDE; SUBSTRATES;

COMPOUND SEMICONDUCTORS; RECOMBINATION-ENHANCED DEFECT REACTION; STABLE DEVICES; THREADING DISLOCATIONS;

DIODES;

EID: 33646205403     PISSN: 08837694     EISSN: None     Source Type: Journal    
DOI: 10.1557/mrs2005.78     Document Type: Article

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