Investigation of Fermi-level pinning at silicon/porous-silicon interface by vibrating capacitor and surface photovoltage measurements

Applied Surface Science

Volumn 235, Issue 3, 2004, Pages 376-388

  Mizsei, J ^a   Shrair, J A ^a   Zolomy I ^a  

^a BUDAPEST UNIVERSITY OF TECHNOLOGY AND ECONOMICS   (Hungary)

Author keywords

Fermi level pinning; Passivation; Porous silicon; SPV; Surface voltage; Vibrating capacitor

Indexed keywords

CAPACITORS; ELECTRIC POTENTIAL; FERMI LEVEL; PASSIVATION; SEMICONDUCTOR DEVICES; SILICON; SPECTROSCOPIC ANALYSIS; TRANSIENTS;

FERMI-LEVEL PINNING; SURFACE PHOTOVOLTAGE (SPV); SURFACE VOLTAGE; VIBRATING CAPACITORS;

INTERFACES (MATERIALS);

EID: 4243137275     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2004.05.110     Document Type: Conference Paper

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