Porous silicon in solar cells technology

Renewable Energy

Volumn 15, Issue 1-4, 1998, Pages 479-482

  Semikina, T V ^a   Shmyryeva, A N ^a  

^a NATIONAL TECHNICAL UNIVERSITY OF UKRAINE   (Ukraine)

Author keywords

Anodic treatment; Antireflection coating; Open voltage; Porous silicon; Short circuit current; Solar cell elements

Indexed keywords

ANTIREFLECTION COATINGS; CURRENT VOLTAGE CHARACTERISTICS; ELECTRONIC EQUIPMENT MANUFACTURE; POROUS SILICON; SHORT CIRCUIT CURRENTS;

ANODIC TREATMENT; OPEN VOLTAGE;

SOLAR CELLS;

EID: 0032157455     PISSN: 09601481     EISSN: None     Source Type: Journal    
DOI: 10.1016/s0960-1481(98)00208-0     Document Type: Article

References (2)

1. Bondarenko, V. P. and A. M. Dorofeev (1995). Why porous silicon for SOI? NATO ARW, Gurzuf, Ukraine, Nov. 1 - 4, Proceedings, Physical and Technical Problems of SOI Structures and Devices, pp. 15 - 26. Kluwer Academic Publishers. Netherlands.
2. Kashirikij, I. M. and Yu. M. Bulishev (1982). Optical method measuring of transparent and semitransparent films thickness. Devices and experimental techniques. 2, 195-203.