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Volumn 158, Issue 3, 2000, Pages 268-274

Measurement and analysis of the characteristics parameters for the porous silicon/silicon using photovoltage spectra

Author keywords

[No Author keywords available]

Indexed keywords

BAND STRUCTURE; CARRIER CONCENTRATION; ELECTRIC VARIABLES MEASUREMENT; ETCHING; HETEROJUNCTIONS; LUMINESCENCE; SEMICONDUCTING SILICON; SPECTRUM ANALYSIS;

EID: 0033714704     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0169-4332(00)00008-8     Document Type: Article
Times cited : (9)

References (17)
  • 11
    • 0343014142 scopus 로고
    • Beijing: Chinese Science Publishing House
    • Kun Huang, Xide Xie Semiconductor Physics. 309:1958;294-295 Chinese Science Publishing House, Beijing.
    • (1958) Semiconductor Physics , vol.309 , pp. 294-295
    • Kun, H.1    Xide, X.2
  • 17
    • 0343449808 scopus 로고
    • Edited by Semiconductor Physics teaching and research section of China Xiamen University Chinese People Education Publishing House
    • Edited by Semiconductor Physics teaching and research section of China Xiamen University. Technological Theory of Semiconductor Devices, Chinese People Education Publishing House, 1977, p. 455.
    • (1977) Technological Theory of Semiconductor Devices , pp. 455


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.