Manufacturing of porous silicon; porosity and thickness dependence on electrolyte composition

Applied Surface Science

Volumn 178, Issue 1-4, 2001, Pages 190-193

  Kordas K ^a   Remes, J ^a   Beke, S ^a   Hu, T ^a,b   Leppavuori S ^a  

^a UNIVERSITY OF OULU   (Finland)

^b UNIVERSITY OF ELECTRONIC SCIENCE AND TECHNOLOGY OF CHINA   (China)

Author keywords

Electrolysis; Porous materials preparation; Semiconductors semiconductor electrolyte contacts

Indexed keywords

ANODIC OXIDATION; COMPOSITION EFFECTS; ELECTROLYSIS; ELECTROLYTES; ETHANOL; HYDROFLUORIC ACID; POROSITY; PROFILOMETRY; SILICON WAFERS; SURFACE ACTIVE AGENTS; WATER;

ANODIZATION;

POROUS SILICON;

EID: 0035797051     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0169-4332(01)00310-5     Document Type: Article

References (11)