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Volumn 58, Issue 1, 1997, Pages 25-31
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A comparative study of transition states of porous silicon by surface photovoltage spectroscopy and time-resolved photoluminescence spectroscopy
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Author keywords
A. Semiconductors; B. Chemical synthesis; D. Electronic band structure; D. Photoconductivity and photovoltaics
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Indexed keywords
ANODIC OXIDATION;
ELECTRON ENERGY LEVELS;
ELECTRON TRANSITIONS;
ELECTRONIC STRUCTURE;
PHOTOCONDUCTIVITY;
PHOTOLUMINESCENCE;
PHOTOVOLTAIC EFFECTS;
SEMICONDUCTING SILICON;
SEMICONDUCTOR QUANTUM WIRES;
SYNTHESIS (CHEMICAL);
SURFACE PHOTOVOLTAGE SPECTROSCOPY;
TIME RESOLVED PHOTOLUMINESCENCE SPECTROSCOPY;
POROUS SILICON;
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EID: 0030822371
PISSN: 00223697
EISSN: None
Source Type: Journal
DOI: 10.1016/s0022-3697(96)00105-9 Document Type: Article |
Times cited : (11)
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References (22)
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