Determination of SiO2-Si interface trap level density (Dit) by vibrating capacitor method

Solid-State Electronics

Volumn 44, Issue 10, 2000, Pages 1825-1831

  Mizsei, János ^a  

^a BUDAPEST UNIVERSITY OF TECHNOLOGY AND ECONOMICS   (Hungary)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITORS; CURRENT DENSITY; HOLE TRAPS; INTERFACES (MATERIALS); MOLECULAR VIBRATIONS; POTENTIAL ENERGY;

INTERFACE TRAP LEVEL DENSITY;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 0034291082     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(00)00119-2     Document Type: Article

References (5)

1. Nicollian E.H., Brews J.R. MOS (Metal Oxide semiconductor) Physics and Technology. 1982;Wiley, New York.
2. 2-Si structures. Solid-State Electron. 34(9):1991;951-957.
3. Mizsei J. Surface potential mapping: comparison of the vibrating capacitor and the SPV method. Solid-State Electron. 44(3):2000;509-513.
4. Dieter Schroder K. Semiconductor Material and Device Characterisation. 1990;Wiley, New York.
5. Peters MA. COS testing combines expanded charge monitoring capabilities with reduced costs. Semiconductor Fabtech. London: ICG Publishing; 1995.