Computer analysis of photon-induced non-equilibrium phenomena at Si and AlGaAs surfaces

Vacuum

Volumn 57, Issue 2, 2000, Pages 111-120

  Adamowicz, Boguslawa ^a   Hasegawa, Hideki ^b  

^a SILESIAN UNIVERSITY OF TECHNOLOGY   (Poland)

^b Grad Sch Electronics Info E   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; DENSITY (SPECIFIC GRAVITY); ELECTRONIC DENSITY OF STATES; ENERGY GAP; FERMI LEVEL; INTERFACES (MATERIALS); NUMERICAL ANALYSIS; PASSIVATION; PHASE EQUILIBRIA; PHOTOLUMINESCENCE; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING SILICON; CHEMICAL OPERATIONS; CHEMICAL REACTIONS; ELECTRONIC STRUCTURE; MOLECULAR BEAM EPITAXY; SEMICONDUCTOR DEVICES; SEMICONDUCTOR MATERIALS; SPECTROSCOPY; SURFACE TREATMENT;

ALUMINUM GALLIUM ARSENIDE; PHOTOLUMINESCENCE QUANTUM EFFICIENCY; PHOTON INDUCED NON EQUILIBRIUM PHENOMENA; SURFACE BAND BENDING; SURFACE FIXED CHARGE; SURFACE PHOTOVOLTAGE; SURFACE RECOMBINATION VELOCITY; SURFACE STATE DENSITY;

SURFACE PHENOMENA;

CORE LEVEL PHOTOEMISSION SPECTROSCOPY; EIREV; SEMICONDUCTOR INTERFACE FORMATION; ULTRAHIGH VACUUM DEPOSITION;

EID: 0034188098     PISSN: 0042207X     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0042-207X(00)00129-9     Document Type: Article

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