Surface potential mapping: comparison of the vibrating capacitor and the SPV method

Solid-State Electronics

Volumn 44, Issue 3, 2000, Pages 509-513

  Mizsei, János ^a  

^a BUDAPEST UNIVERSITY OF TECHNOLOGY AND ECONOMICS   (Hungary)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITORS; ELECTRIC CHARGE; ELECTRIC EXCITATION; PHOTOMAPPING; SEMICONDUCTOR INSULATOR BOUNDARIES; SURFACES;

SEMICONDUCTOR SURFACES; SURFACE CHARGE; SURFACE EXCITATION; SURFACE PHOTO VOLTAGE METHOD; SURFACE POTENTIAL MAPPING;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 0034159040     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(99)00264-6     Document Type: Article

References (6)

1. 2-Si structures. Solid State Electronics. 34:(951):1991;951-957.
2. Schroder D.K. Semiconductor material and device characterisation. 1990;John Wiley and Sons, New York.
3. 2. Solid State Electronics. 20:(1):1977;11-18.
4. Peters M.A. COS testing combines expanded charge monitoring capabilities with reduced costs. Semiconductor Fabtech. 1995;I. C. G. Publishing Ltd, London.
5. Mizsei J. Olfactory images by scanning Kelvin method. Sensors and Actuators. B48:1998;300-304.
6. Winquist F., Sundgren H., Hedborg E., Lundstrom I. Evaluation of gas sensing surfaces with a scanned light pulse technique. Sensors and Actuators. B15:(16810):1993;270-274.