P-type ZnO thin films via phosphorus doping

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 6895, Issue , 2008, Pages

  Norton, D P ^a   Kim, H S ^a   Erie, J M ^a   Pearton, S J ^a   Wang, Y L ^a   Ren, F ^a  

^a University of Florida   (United States)

Author keywords

p type doping; Pulsed laser deposition; ZnO

Indexed keywords

FILMS; LEAKAGE CURRENTS; LIGHT EMISSION; LIGHT EMITTING DIODES; MICROFLUIDICS; NONMETALS; OXIDES; PHOSPHORUS; PIGMENTS; SEMICONDUCTING ZINC COMPOUNDS; SEMICONDUCTOR DIODES; SEMICONDUCTOR MATERIALS; THICK FILMS; THIN FILMS; ZINC; ZINC ALLOYS; ZINC OXIDE; ZINC SULFIDE;

(1 1 0) SURFACE; (PL) PROPERTIES; CURRENT PATHS; ELECTRON HOLE TRANSPORT; HIGHLY EFFICIENT; IN ORDER; LIGHT-EMITTING DIODES; OXIDE MATERIALS; P N JUNCTIONS; P-TYPE DOPING; P-TYPE ZNO THIN FILMS; PHOSPHORUS DOPING; PHOSPHORUS-DOPED; WIDE-BAND-GAP SEMICONDUCTORS;

MATERIALS PROPERTIES;

EID: 42149132020     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.785467     Document Type: Conference Paper

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