Repair specification study for half pitch 32-nm patterns for EUVL

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 6730, Issue , 2007, Pages

  Aoyama, Hajime ^a   Amano, Tsuyoshi ^a   Nishiyama, Yasushi ^a   Shigemura, Hiroyuki ^a   Suga, Osamu ^a  

^a SEMICONDUCTOR LEADING EDGE TECHNOLOGIES INC   (Japan)

Author keywords

32 nm node; Absorber defect; Defect repair; EUVL; Optical constant; Rigorous simulation

Indexed keywords

COMPUTATION THEORY; DEFECTS; LIGHT REFRACTION; OPTICAL RESOLVING POWER;

ABSORBER DEFECT; DEFECT REPAIR; OPTICAL CONSTANT; RIGOROUS SIMULATION;

EXTREME ULTRAVIOLET LITHOGRAPHY;

EID: 42149114689     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.746586     Document Type: Conference Paper

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