Defect printability study using EUV lithography

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 6151 I, Issue , 2006, Pages

  Holfeld, Christian ^a   Bubke, Karsten ^a   Lehmann, Falk ^a   Fontaine, Bruno La ^b   Pawloski, Adam R ^b   Schwarzl, Siegfried ^c   Kamm, Frank Michael ^c   Graf, Thomas ^d   Erdmann, Andreas ^d  

^a Advanced Mask Technology Center   (Germany)

^b ADVANCED MICRO DEVICES   (United States)

^c INFINEON TECHNOLOGIES AG   (Germany)

^d FRAUNHOFER INSTITUTE FOR INTEGRATED SYSTEMS AND DEVICE TECHNOLOGY IISB   (Germany)

Author keywords

Critical defect size; Defect; Defect printability; EUV lithography; Resist resolution

Indexed keywords

COMPUTER SIMULATION; CRYSTAL DEFECTS; INFRARED IMAGING; MASKS; OPTICAL RESOLVING POWER;

CRITICAL DEFECT SIZE; DEFECT PRINTABILITY; EUV LITHOGRAPHY; RESIST RESOLUTION;

LITHOGRAPHY;

EID: 33745588814     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.656386     Document Type: Conference Paper

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