Evaluation of defect inspection sensitivity using 199nm inspection optics

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 6607, Issue PART 2, 2007, Pages

  Amano, Tsuyoshi ^a   Nishiyama, Yasushi ^a   Shigemura, Hiroyuki ^a   Terasawa, Tsuneo ^a   Suga, Osamu ^a   Hashimoto, Hideaki ^b   Murakami, Shingo ^c   Kikuiri, Nobutaka ^c  

^a SEMICONDUCTOR LEADING EDGE TECHNOLOGIES INC   (Japan)

^b NUFLARE TECHNOLOGY INC   (Japan)

^c Advanced Mask Inspection Technology Inc   (Japan)

Author keywords

199nm; Die to die; EUVL mask; Mask defect; Mask inspection; Reflected illumination

Indexed keywords

EUVL MASKS; MASK DEFECT; MASK INSPECTION; PATTERN SIZE; REFLECTED ILLUMINATION;

DEFECT DENSITY; EXTREME ULTRAVIOLET LITHOGRAPHY; INSPECTION; OPTICS;

MASKS;

EID: 36248949552     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.729034     Document Type: Conference Paper

References (4)

1. T. Tojo, et al., "Advanced mask inspection optical system (AMOS) using 198.5nm wavelength for 65nm (hp) node and beyond" Proc. SPIE vol. 5567, 1011, (2004)
2. Y. Tsuji, et al., "Development of nextgeneration mask inspection method by using the feature of mask image captured with 199nm inspection optics" Proc. SPIE vol. 6349, 138, (2006)
3. N. Kikuiri, et al., "Development of Advanced Reticle Inspection Apparatus for hp65 nm node device and veyond" Pore. SPIE vol. 6283, 130, (2006)
4. D. Y. Kim, et al., "EUV mask pattern inspection for Memory Mask Fabrication in 45nm node and below" Proc. SPIE vol. 6349, 95, (2006)