Edge hole direct tunneling in off-state ultrathin gate oxide p-channel MOSFETs

Technical Digest - International Electron Devices Meeting

Volumn , Issue , 2000, Pages 679-682

  Yang, K N ^a   Huang, H T ^a   Chen, M J ^a   Lin, Y M ^b   Yu, M C ^b   Jang, S M ^b   Yu, C H ^b   Liang, M S ^b  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

^b TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRON TUNNELING; GATES (TRANSISTOR); HOLE MOBILITY; LEAKAGE CURRENTS; POLYSILICON; ULTRATHIN FILMS;

EDGE DIRECT TUNNELING (EDT);

MOSFET DEVICES;

EID: 0034453899     PISSN: 01631918     EISSN: None     Source Type: Journal    
DOI: 10.1109/IEDM.2000.904410     Document Type: Article

References (11)