Carrier transport properties of thin gate oxides after soft and hard breakdown

Microelectronic Engineering

Volumn 59, Issue 1-4, 2001, Pages 5-15

  Takagi, Shin Ichi ^a   Takayanagi, Mariko ^a  

^a TOSHIBA CORPORATION   (Japan)

Author keywords

Gate oxide; Hard breakdown; Leakage current; Reliability; Soft breakdown

Indexed keywords

CHARGE CARRIERS; ELECTRIC BREAKDOWN OF SOLIDS; ELECTRON TUNNELING; HOLE MOBILITY; LEAKAGE CURRENTS; POLYSILICON; PROBABILITY; SUBSTRATES; THIN FILM TRANSISTORS;

THIN GATE OXIDES;

GATES (TRANSISTOR);

EID: 0035498504     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0167-9317(01)00624-4     Document Type: Conference Paper

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