Carrier separation analysis for clarifying leakage mechanism in unstressed and stressed HfAlOx/SiO2 stack dielectric layers

IEEE International Reliability Physics Symposium Proceedings

Volumn 2004-January, Issue January, 2004, Pages 188-193

  Mizubayashi, Wataro ^a   Yasuda, Naoki ^a   Ota, Hiroyuki ^a   Hisamatsu, Hirokazu ^a   Tominaga, Koji ^a   Iwamoto, Kunihiko ^a   Yamamoto, Katsuhiko ^a   Horikawa, Tsuyoshi ^a   Nabatame, Toshihide ^a   Toriumi, Akira ^a,b  

^a NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

^b UNIVERSITY OF TOKYO   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CONDUCTION BANDS; LEAKAGE CURRENTS; MOSFET DEVICES; POLYCRYSTALLINE MATERIALS;

CARRIER SEPARATION; CONDUCTION BAND EDGE; DIELECTRIC LAYER; ELECTRON CURRENTS; LEAKAGE MECHANISM; STRESS-INDUCED LEAKAGE CURRENT; TRAP GENERATION; VALENCE BAND EDGES;

HIGH-K DIELECTRIC;

EID: 84932161790     PISSN: 15417026     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/RELPHY.2004.1315322     Document Type: Conference Paper

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