Influence of AIN layers on the interface stability of HfO 2 gate dielectric stacks

Applied Physics Letters

Volumn 89, Issue 4, 2006, Pages

  Agustin, Melody P ^a   Alshareef, Husam ^b   Quevedo Lopez, Manuel A ^b   Stemmer, Susanne ^a  

^a University of California   (United States)

^b SEMATECH   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

GATE STACKS; INTERFACE STRUCTURES; OXYGEN DEFICIENCY; SILICIDE REACTIONS;

ANNEALING; DIELECTRIC MATERIALS; HAFNIUM COMPOUNDS; INTERFACES (MATERIALS); SILICA;

ALUMINUM NITRIDE;

EID: 33746596247     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2236264     Document Type: Article

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