Interface dipole and effective work function of Re in Re HfO2 SiOx n-Si gate stack

Applied Physics Letters

Volumn 88, Issue 7, 2006, Pages

  Liang, Y ^a,b   Curless, J ^a   Tracy, C J ^a   Gilmer, D C ^a   Schaeffer, J K ^a   Triyoso, D H ^a   Tobin, P J ^a  

^a FREESCALE SEMICONDUCTOR INC   (United States)

^b MOTOROLA INC   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

INTERFACE DIPOLE; RE HFO2 SIOX N-SI GATE STACK; WORK FUNCTION;

CAPACITANCE; ELECTRIC POTENTIAL; FERMI LEVEL; RHENIUM COMPOUNDS; SURFACE PROPERTIES; X RAY SPECTROSCOPY;

GATES (TRANSISTOR);

EID: 32944466270     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2175488     Document Type: Article

References (21)

1. G. D. Wilk, R. M. Wallace, and J. M. Anthony, J. Appl. Phys. 87, 484 (2000).
2. D. C. Gilmer, R. Hegde, R. Cotton, R. Garcia, V. Dhandapani, D. Triyoso, D. Roan, A. Franke, R. Rai, L. Prabhu, C. Hobbs, J. M. Grant, L. La, S. Samavedam, B. Taylor, H. Tseng, and P. Tobin, Appl. Phys. Lett. 81, 1288 (2002).
3. Y. C. Yeo, P. Ranade, T.-J. King, and C. Hu, IEEE Electron Device Lett. 23, 342 (2002).
4. C. Hobbs, L. Fonseca, V. Dhandapani, S. Samavedam, B. Taylor, J. Grant, L. Dip, D. Triyoso, R. Hedge, D. Gilmer, R. Garcia, D. Roan, L. Lovejoy, R. Rai, L. Hebert, H. Tseng, B. White, and P. Tobin, 2003 Symposium on VLSI Tech. Digest., 2003.
5. J. K. Schaeffer, L.R. C. Fonseca, S. B. Samavedam, Y. Liang, P. J. Tobin, and B. E. White, Appl. Phys. Lett. 85, 1826 (2004).
6. T. E. Cook, Jr., C. C. Fulton, W. J. Mecouch, K. M. Tracy, R. F. Davis, E. H. Hurt, G. Lucovsky, and R. J. Nemanich, J. Appl. Phys. 93, 3995 (2003).
7. L. J. Brillson, Surf. Sci. 299, 909 (1994).
8. Y. Liang, Y. Wei, X. M. Hu, Z. Yu, R. Droopad, H. Li, and K. Moore, J. Appl. Phys. 96, 3413 (2004).
9. D. Triyoso, R. Liu, D. Roan, M. Ramon, N. V. Edwards, R. Gregory, D. Werho, J. Kulik, G. Tam, E. Irwin, X.-D. Wang, L. B. La, C. Hobbs, R. Garcia, J. Baker, B. E. White, Jr., and P. Tobin, J. Electrochem. Soc. 151, 220 (2004).
10. T. L. Barr, Modern ESCA, the Principles and Practice of X-ray Photo-electron Spectroscopy (CRC, Boca Raton, FL, 1994).
11. S. Chambers, in Handbook of compound Semiconductors, edited by, P. H. Holloway, and, G. E. McGuire, (Noyes, New York, 1995).
12. C. Hobbs, L. Fonseca, A. Knizhnik, V. Dhandapani, S. Samavedam, W. Taylor, J. Grant, L. Dip, D. Triyoso, R. Hegde, D. Gilmer, R. Garcia, D. Roam, M. Lovejoy, R. Rai, E. Hebert, H. Tseng, S. Anderson, B. White, and P. Tobin, IEEE Trans. Electron Devices 51, 978 (2004).
13. Y. Yeo, T. King, and C. Hu, J. Appl. Phys. 92, 7266 (2002).
14. J. J. Hauser and K. Ahmed, Characterization and Metrology for ULSI Technology (AIP, New York, 1998).
15. J. Robertson and C. W. Chen, Appl. Phys. Lett. 0003-6951 10.1063/1.123476 74, 1168 (1999); J. Robertson, J. Vac. Sci. Technol. B 18, 1785 (2000).
16. J. Robertson and C. W. Chen, Appl. Phys. Lett. 0003-6951 10.1063/1.123476 74, 1168 (1999); J. Robertson, J. Vac. Sci. Technol. B 18, 1785 (2000).
17. J. Tersoff, Phys. Rev. B 0163-1829 10.1103/PhysRevB.30.4874 30, 4874 (1984); J. Tersoff, Phys. Rev. Lett. 52, 465 (1984).
18. J. Tersoff, Phys. Rev. B 0163-1829 10.1103/PhysRevB.30.4874 30, 4874 (1984); J. Tersoff, Phys. Rev. Lett. 52, 465 (1984).
19. E. Garfunkel, E. Gusev, and A. Vul, Fundamental Aspects of Ultra-Thin Dielectrics on Si-Based Devices, NATO Science Series, Vol. 47 (Kluwer, Dordrecht, 1998).
20. Y. Liang (unpublished).
21. C. C. Fulton, G. Lucovsky, and R. J. Nemanich, Appl. Phys. Lett. 84, 580 (2004).