γ-Irradiation-induced changes at the electrical characteristics of Sn/p-Si Schottky contacts

Vacuum

Volumn 82, Issue 8, 2008, Pages 789-793

  Güllü, Ö ^a   Demir, F ^a   Cimilli, F E ^a   Biber, M ^a  

^a ATATÜRK UNIVERSITY   (Turkey)

Author keywords

Barrier inhomogeneity; Radiation effect; Schottky barrier diode

Indexed keywords

ELECTRIC PROPERTIES; GAMMA RAYS; RADIATION EFFECTS; SENSORS; TIN COMPOUNDS;

BARRIER INHOMOGENEITY; ROOM TEMPERATURE;

SCHOTTKY BARRIER DIODES;

EID: 41149115194     PISSN: 0042207X     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.vacuum.2007.11.006     Document Type: Article

References (29)

1. Jayavel P., Udhayasankar M., Kumar J., Asokan K., and Kanjilal D. Nucl Instrum Methods B 156 (1999) 110
2. Kumar S., Katharria Y.S., Kumar S., and Kanjilal D. Solid-State Electron 50 (2006) 1835
3. Li S.T., Nener B.D., Faraone I., Nassibuan A.G., and Hotchkis M.A.C. J Appl Phys 73 (1993) 640
4. Auret F.D., Goodman S.A., Erasmus R., Meyer W.E., and Myburg G. Nucl Instrum Methods B 106 (1995) 323
5. Arulkumaran S., Arokiaraj J., Dharmarasu N., and Kumar J. Nucl Instrum Methods B 119 (1996) 519
6. Dharmarasu N., Arulkumaran S., Sumathi R.R., Jayavel P., Kumar J., Magudapathy P., et al. Nucl Instrum Methods B 140 (1998) 119
7. Aliyu Y.H., Morgen D.V., and Bunce R.W. Phys Stat Sol A 135 (1993) 119
8. Jayavel P., Kumar J., Santhakumar K., Magudapathy P., and Nair K.G.M. Vacuum 57 (2000) 51
9. Karatas S., Turut A., and Altindal S. Nucl Instrum Methods A 555 (2005) 260
10. Karatas S., and Turut A. Nucl Instrum Methods A 566 (2006) 584
11. Tataroglu A., Altindal S., and Bulbul M.M. Nucl Instrum Methods A 568 (2006) 863
12. Coskun C., Gedik N., and Balci E. Semicond Sci Technol 21 (2006) 1656
13. Tugluoglu N. Nucl Instrum Methods B 254 (2007) 118
14. Pattabi M., Krishnan S., Ganesh, and Mathew X. Sol Energy 81 (2007) 111
15. Fonash S.J., Ashok S., and Singh R. Appl Phys Lett 39 (1981) 423
16. Grussell E., Berg S., and Andersson L.P. J Electrochem Soc 127 (1980) 1573
17. Mamor M., Sellai A., Bouziane K., Harthi S.H.Al., Busaidi M.Al., and Gard F.S. J Phys D:Appl Phys 40 (2007) 1351
18. Sze S.M. Physics of semiconductor devices. 2nd ed (1981), Wiley, New York
19. Rhoderick E.H., and Williams R.H. Metal-semiconductor contacts. 2nd ed (1988), Clarendon, Oxford
20. Card H.C., and Rhoderick E.H. J Phys D 4 (1971) 1589
21. Hughes G.W. J Appl Phys 48 12 (1977) 5357
22. Cheung S.K., and Cheung N.W. Appl Phys Lett 49 2 (1986) 85
23. Tataroglu A., and Altindal S. Nucl Instrum Methods B 252 (2006) 257
24. Sisodia V., Sisodia V., Kabiraj D., and Jain I.P. J Indian Inst Sci 84 (2005) 151
25. Vander Ziel A. Solid state physical electronics. 2nd ed (1968), Prentice-Hall, New Jersey
26. Zukowski P., Partyka J., and Wegierek P. Phys Stat. Sol. A 159 (1997) 509
27. Singh R., Arora S.K., and Kanjilal D. Mater Sci Semicond Process 4 (2001) 425
28. Crowell C.R., and Rideout V.L. Solid-State Electron 12 2 (1969) 89
29. Zeyrek S., Altindal S., Yuzer H., and Bulbul M.M. Appl Surf Sci 252 8 (2006) 2999