Electrical characterization of high energy 12C irradiated Au/n-GaAs Schottky Barrier Diodes

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 156, Issue 1, 1999, Pages 110-115

  Jayavel, P ^a   Udhayasankar, M ^a   Kumar, J ^a   Asokan, K ^b   Kanjilal, D ^b  

^a ANNA UNIVERSITY   (India)

^b INTER UNIVERSITY ACCELERATOR CENTRE   (India)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CAPACITANCE; CARBON; CRYSTAL DEFECTS; CURRENT VOLTAGE CHARACTERISTICS; GOLD; INTERFACES (MATERIALS); ION BOMBARDMENT; LEAKAGE CURRENTS; RADIATION DAMAGE; SEMICONDUCTING GALLIUM ARSENIDE; SILICON;

BARRIER HEIGHT; CAPACITANCE VOLTAGE CHARACTERISTICS; IDEALITY FACTOR;

SCHOTTKY BARRIER DIODES;

EID: 0032626680     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0168-583X(99)00282-7     Document Type: Article

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