60Co γ-ray irradiation effects on the interface traps density of tin oxide films of different thicknesses on n-type Si (1 1 1) substrates

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 254, Issue 1, 2007, Pages 118-124

  Tugluoglu N ^a  

^a Saraykoy Nuclear Research and Training Center   (Turkey)

Author keywords

60Co ray; C V; G V; Interface state density; MOS diodes; Series resistance; SnO2

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC CONDUCTANCE; ELECTRIC RESISTANCE; INTERFACES (MATERIALS); IRRADIATION; MOS DEVICES; SEMICONDUCTOR DIODES;

INTERFACE STATE DENSITY; IRRADIATION DOSE; MOS DIODES; SERIES RESISTANCE;

GAMMA RAYS;

EID: 33845611078     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.nimb.2006.10.082     Document Type: Article

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