On the enhancement of effective barrier height in Ti/n-GaAs Schottky barrier diodes

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 119, Issue 4, 1996, Pages 519-522

  Arulkumaran, S ^a   Arokiaraj, J ^a   Dharmarasu, N ^a   Kumar, J ^a  

^a ANNA UNIVERSITY   (India)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CURRENT VOLTAGE CHARACTERISTICS; ION BOMBARDMENT; PROTONS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DIODES;

PROTON BOMBARDMENT;

SCHOTTKY BARRIER DIODES;

EID: 0030387920     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0168-583X(96)00465-X     Document Type: Article

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