Effect of ion implantation and annealing on the dielectric properties of silicon

Physica Status Solidi (A) Applied Research

Volumn 159, Issue 2, 1997, Pages 509-515

  Zukowski, P ^a   Partyka, J ^a   Wegierek P ^a  

^a LUBLIN UNIVERSITY OF TECHNOLOGY   (Poland)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; ANTIMONY; ARGON; BORON; COMPOSITION EFFECTS; CRYSTAL DEFECTS; ION IMPLANTATION; NEON; NITROGEN; PERMITTIVITY; PHOSPHORUS; SEMICONDUCTOR DOPING;

INTERSTITIAL DEFECTS; JUMPING RECHARGING;

SEMICONDUCTING SILICON;

EID: 0031069194     PISSN: 00318965     EISSN: None     Source Type: Journal    
DOI: 10.1002/1521-396X(199702)159:2<509::AID-PSSA509>3.0.CO;2-K     Document Type: Article

References (17)

1. P. W. ŻUKOWSKI, S. B. KANTOROW, D. MA̧CZKA, and V. F. STELMAKH, phys. stat. sol. (a) 112, 695 (1989).
2. N. F. MOTT and E. A. DAVIS, Electron Process in Non-Crystalline Materials, Clarendon Press, Oxford 1979.
3. P. ŻUKOWSKI, Semiconductors 26, 84 (1992).
4. P. ŻUKOWSKI, K. KISZCZAK, D. MA̧CZKA, and A. LATUSZYSKI, Radiat. Eff. 132, 11 (1994).
5. P. ŻUKOWSKI, Semiconductors 27, 798 (1993).
6. P. W. ŻUKOWSKI, S. B. KANTOROW, K. KISZCZAK, D. MA̧CZKA, A. RODZIK, V. F. STELMAKH, and E. CZARNECKA-SUCH, phys. stat. sol. (a) 128, K117 (1991).
7. P. ŻUKOWSKI, S. B. KANTOROW, K. KISZCZAK, D. MA̧CZKA, A. RODZIK and V. F. STELMAKH, Dokl. Akad. Nauk Belarus. 37, 41 (1993).
8. A. N. ZHEVNO, V. V. SIDORIK, and V. D. TKACHEV, Soviet Phys. - Semicond. 10, 312 (1976).
9. G. D. WATKINS and J. W. CORBETT, Phys. Rev. 138, 543 (1965).
10. L. J. CHENG and J. LORI, Phys. Rev. 171, 856 (1968).
11. R. C. NEWMAN and D. M. J. TOTTERDELL, J. Phys. C 8, 3944 (1975).
12. M. J. STEIN, F. L. VOOK, D. K. BRICE, J. A. BORDERS, and S. T. PICRAUX, Radiat. Eff. 6, 19 (1970).
13. S. KIRKPATRICK, Proc. 5th Internat. Conf. Amorphous and Liquid Semiconductors, Garmisch-Partenkirchen 1973, Ed. J. STUKE and W. BRENIG, Taylor & Francis, London 1974 (p. 183).
14. CH. A. WERT and R. M. THOMSON, Physics of Solids, McGraw-Hill, Publ. Co., 1970.
15. P. ŻUKOWSKI, J. PARTYKA, and P. WȨGIEREK, Materialy IV Symp. Naukowo-Technicznego Nowoczesne technologie elektrostatyczne, Białystok 1995 (p. 108 to 115).
16. H. LEE, N. N. GERASIMENKO, and J. W. CORBETT, Phys. Rev. B 14, 4506 (1976).
17. K. L. BROWER, Phys. Rev. B 14, 872 (1976).