Low energy proton irradiation induced interface defects on Pd/n-GaAs Schottky diodes and its characteristics

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 140, Issue 1-2, 1998, Pages 119-123

  Dharmarasu, N ^a   Arulkumaran, S ^a   Sumathi, R R ^a   Jayavel, P ^a   Kumar, J ^a   Magudapathy, P ^b   Nair, K G M ^b  

^a ANNA UNIVERSITY   (India)

^b INDIRA GANDHI CENTRE FOR ATOMIC RESEARCH   (India)

Author keywords

C V measure ment; GaAs; I V measurement; I V T measurement; Metal semiconductor; Proton irradiation

Indexed keywords

ANNEALING; CAPACITANCE; CRYSTAL DEFECTS; CURRENT VOLTAGE CHARACTERISTICS; INTERFACES (MATERIALS); ION BOMBARDMENT; LEAKAGE CURRENTS; PALLADIUM; PROTONS; RADIATION DAMAGE; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR METAL BOUNDARIES;

PROTON IRRADIATION;

SCHOTTKY BARRIER DIODES;

EID: 0032047924     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0168-583X(98)00003-2     Document Type: Article

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