SCOPUS 정보 검색 플랫폼

Materials Science in Semiconductor Processing

Volumn 4, Issue 5, 2001, Pages 425-432

Swift heavy ion irradiation induced modification of electrical characteristics of Au/n-Si Schottky barrier diode

(3) Singh, R a Arora, S K a Kanjilal, D a

a INTER UNIVERSITY ACCELERATOR CENTRE (India)

Author keywords

C V measurement; Electronic and nuclear energy loss; I V measurement; Interface state density; Schottky barrier diode; Swift heavy ion irradiation

Indexed keywords

CAPACITANCE; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC LOSSES; GOLD; HEAVY IONS; IRRADIATION; LEAKAGE CURRENTS; SEMICONDUCTING SILICON; SEMICONDUCTOR METAL BOUNDARIES; TRANSPORT PROPERTIES;

INTERFACE STATE DENSITY;

SCHOTTKY BARRIER DIODES;

EID: 0035474049 PISSN: 13698001 EISSN: None Source Type: Journal
DOI: 10.1016/S1369-8001(01)00009-9 Document Type: Article

Times cited : (40)

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