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Materials Science and Engineering: B

Volumn 124-125, Issue SUPPL., 2005, Pages 39-44

Boron diffusion in strained and strain-relaxed SiGe

(7) Wang, C C a Sheu, Y M a Liu, Sally a Duffy, R b Heringa, A b Cowern, N E B c Griffin, P B d

a TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY (Taiwan)

b PHILIPS RESEARCH LABORATORIES (Netherlands)

c UNIVERSITY OF SURREY (United Kingdom)

d Stanford University (United States)

Author keywords

Boron diffusion; CMOS technology; Strain relaxed SiGe

Indexed keywords

BORON; CMOS INTEGRATED CIRCUITS; CONCENTRATION (PROCESS); ENERGY ABSORPTION; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR JUNCTIONS; STRAIN RATE; VLSI CIRCUITS;

BORON DIFFUSION; CMOS TECHNOLOGY; STRAIN-RELAXED SIGE; STRESS EFFECT;

DIFFUSION IN SOLIDS;

EID: 27844549296 PISSN: 09215107 EISSN: None Source Type: Journal
DOI: 10.1016/j.mseb.2005.08.127 Document Type: Conference Paper

Times cited : (14)

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