Antimony and boron diffusion in SiGe and Si under the influence of injected point defects

Journal of Materials Science: Materials in Electronics

Volumn 12, Issue 4-6, 2001, Pages 219-221

  Bonar, J M ^a   Willoughby, A F W ^a   Dan, A H ^a   McGregor, B M ^a   Lerch, W ^b   Loeffelmacher, D ^b   Cooke, G A ^c   Dowsett, M G ^c  

^a UNIVERSITY OF SOUTHAMPTON   (United Kingdom)

^b STEAG AG   (Germany)

^c UNIVERSITY OF WARWICK   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

DIFFUSION; MATHEMATICAL MODELS; MOLECULAR BEAM EPITAXY; POINT DEFECTS; RAPID THERMAL ANNEALING; SEMICONDUCTING SILICON; SEMICONDUCTOR DOPING;

DIFFUSION RETARDATION; INJECTED POINT DEFECTS;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 0035300019     PISSN: 09574522     EISSN: None     Source Type: Journal    
DOI: 10.1023/A:1011299017835     Document Type: Article

References (9)