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Volumn 28, Issue 1, 1998, Pages 185-214

Transient diffusion of beryllium and silicon in gallium arsenide

Author keywords

GaAs:Be; GaAs:Si; Ion implantation; Molecular beam epitaxy

Indexed keywords

BERYLLIUM; COMPOSITION EFFECTS; CRYSTAL ATOMIC STRUCTURE; DIFFUSION IN SOLIDS; ION IMPLANTATION; MATHEMATICAL MODELS; MOLECULAR BEAM EPITAXY; POINT DEFECTS; SEMICONDUCTOR DOPING; SEMICONDUCTOR GROWTH; SILICON;

EID: 0031624241     PISSN: 00846600     EISSN: None     Source Type: Journal    
DOI: 10.1146/annurev.matsci.28.1.185     Document Type: Article
Times cited : (7)

References (85)
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    • ed. W Jost, New York: Academic
    • LeClaire AD. 1970. In Solid State, ed. W Jost, p. 780. New York: Academic
    • (1970) Solid State , pp. 780
    • LeClaire, A.D.1
  • 52
    • 85034281608 scopus 로고
    • PhD thesis. Stanford Univ.
    • 1-x As. PhD thesis. Stanford Univ. 141 pp.
    • (1994) 1-x As
    • Lee, C.C.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.