Modeling vacancy injection from the silicon/silicon-nitride interface

Journal of Materials Science: Materials in Electronics

Volumn 19, Issue 4, 2008, Pages 323-326

  Hasanuzzaman, Mohammad ^a   Haddara, Yaser M ^a  

^a MCMASTER UNIVERSITY   (Canada)

Author keywords

[No Author keywords available]

Indexed keywords

INJECTION FLUX; NITRIDE FILM; SEMI-EMPIRICAL MODEL;

ANNEALING; GROWTH RATE; NITRIDATION; OXIDATION; PHASE INTERFACES;

SILICON NITRIDE;

EID: 39149107161     PISSN: 09574522     EISSN: 1573482X     Source Type: Journal    
DOI: 10.1007/s10854-007-9321-6     Document Type: Article

References (24)

1. J.M. Bonar, B.M. McGregor, A.F.W. Willoughby, A.D.N. Paine, in Phys. and Tech. of Dopant-Defect Interactions Symp., ed. By H.-J.L. Gossmann, T.E. Haynes, M.E. Law, A.N. Larsen, S. Odanaka (Mater. Res. Soc., Warrendale, PA, 1999), p. 103
2. J.M. Bonar, A.F.W. Willoughby, A.H. Dan, B.M. Mcgregor, W. Lerch, D. Loeffelmacher, G.A. Cooke, M.G. Dowsett, J. Mater. Sci: Mater. Elec. 12, 219 (2001)
3. A.H. Dan, A.F.W. Willoughby, J.M. Bonar, B.M. Mcgregor, in Seventh Postgraduate Conference in Engineering Materials (University of Southampton, 2001), p. 17
4. P.M. Fahey, G. Barbuscia, M. Moslehi, R.W. Dutton, Appl. Phys. Lett. 46, 784 (1985)
5. P.M. Fahey, R.W. Dutton, M. Moslehi, Appl. Phys. Lett. 43, 683 (1983)
6. P.M. Fahey, P.B. Griffin, J.D. Plummer, Rev. Mod. Phys. 61, 289 (1989)
7. Y. Hayafuji, Y. Kajiwara, S. Usui, J. Appl. Phys. 53, 8639 (1982)
8. S. Mizuo, H. Higuchi, Jpn. J. Appl. Phys. 21, 281 (1982)
9. S. Mizuo, T. Kusaka, A. Shintani, M. Nanba, H. Higuchi, J. Appl. Phys. 54, 3860 (1983)
10. M.S.A. Karunaratne, A.F.W. Willoughby, J.M. Bonar, J. Zhang, P. Ashburn, J. Appl. Phys. 97, 113531 (2005)
11. M. Hasanuzzaman and Y. Haddara, In Progress
12. M. Griglione, J. Anderson, Y.M. Haddara, M.E. Law, K.S. Jones, A. van den Bogaard, J. Appl. Phys. 88, 1366 (2000)
13. M. Griglione, T.J. Anderson, M.E. Law, K.S. Jones, A. van den Bogaard, M.P.-L. Margarida, J. Appl. Phys. 89, 2904 (2001)
14. M.D. Griglione, T.J. Anderson, Y. Haddara, M.E. Law, K.S. Jones, in Silicon Front End Technology--Materials Processing and Modeling Symposium, ed. by N.E.B. Cowern, D. Jacobson, P. Griffin, P. Packan, R. Webb (Mater. Res. Soc., Warrendale, PA, 1998) p. 119
15. Y. Hayafuji, K. Kajiwara, J. Electrochem. Soc. 129, 2102 (1982)
16. T. Ito, S. Hijiya, T. Nozaki, H. Arakawa, M. Shinoda, Y. Fukukawa, J. Electrochem. Soc. 125, 448 (1978)
17. S.P. Murarka, C.C. Chang, A.C. Adams, J. Electrochem. Soc. 126, 996 (1979)
18. M.M. Moslehi, K.C. Saraswat, IEEE Trans. Elec. Dev. ED-32, 106 (1985)
19. T.K. Mogi, M.O. Thompson, H.-J. Gossmann, J.M. Poate, H.S. Luftman, Appl. Phys. Lett. 69, 1273 (1996)
20. FLOOPS Manual (University of Florida)
21. FLOOPS-ISE Manual (Release 9.5, ISE Integrated Systems Engineering)
22. Z.R. Jovanovic, J. Mat. Sci. Lett. 14, 1263 (1995)
23. A.J. Moulson, J. Mat. Sci. 14, 1017 (1979)
24. V.L. Novikov, V.G. Abbakumov, L.V. Miroshnichenko, S.I. Romanov, Refract. Ind. Ceram. 34, 26 (1993)