Self-diffusion of 31Si and 71Ge in relaxed Si0.20Ge0.80 layers

Physical Review Letters

Volumn 89, Issue 8, 2002, Pages

  Laitinen, P ^a   Strohm, A ^a   Huikari, J ^a   Nieminen, A ^a   Voss, T ^a   Grodon, C ^a   Riihimaki I ^a   Kummer, M ^a   Aysto J ^a   Dendooven, P ^a   Rasanen J ^a   Frank, W ^a  

^a UNIVERSITY OF JYVÄSKYLÄ   (Finland)

Author keywords

[No Author keywords available]

Indexed keywords

BAND STRUCTURE; CARRIER MOBILITY; DIFFUSION IN SOLIDS; DISLOCATIONS (CRYSTALS); ION IMPLANTATION; ISOTOPES; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SEMICONDUCTING FILMS; SEMICONDUCTING GERMANIUM; SEMICONDUCTING SILICON; SINGLE CRYSTALS; STOICHIOMETRY;

ACTIVATION ENTHALPY; SELF-DIFFUSION; SILICON RADIOTRACER ATOM; TEMPERATURE DEPENDENCE;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 0037135868     PISSN: 00319007     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (17)