Modeling the suppression of boron diffusion in SiSiGe due to carbon incorporation

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 24, Issue 3, 2006, Pages 1365-1370

  Rizk, Samer ^a   Haddara, Yaser M ^a   Sibaja Hernandez, A ^b,c  

^a MCMASTER UNIVERSITY   (Canada)

^b IMEC   (Belgium)

^c Katholieke Universiteit Leuven   (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

BORON; CARBON; CRYSTAL STRUCTURE; DIFFUSION; MATHEMATICAL MODELS; SILICON COMPOUNDS;

FRANK TURNBULL MECHANISMS; PROCESS SIMULATORS; SILICON GERMANIUM;

SILICON;

EID: 33744947505     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.2198858     Document Type: Article

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