Impact of crystallization statistics on data retention for phase change memories

Technical Digest - International Electron Devices Meeting, IEDM

Volumn 2005, Issue , 2005, Pages 742-745

  Redaelli, A ^a   Ielmini, D ^a   Lacaita, A L ^a   Pellizzer, F ^b   Pirovano, A ^b   Bez, R ^b  

^a POLITECNICO DI MILANO   (Italy)

^b STMICROELECTRONICS   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; CRYSTALLIZATION; MATHEMATICAL MODELS; MONTE CARLO METHODS; PERCOLATION (SOLID STATE); STATISTICS;

DATA RETENTION; FAILURE TIME DISPERSIONS; PCM DEVICES;

PHASE CHANGE MEMORY;

EID: 33847720259     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (6)

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4. [4]D-H Kim et al., J. Appl Phys. 97, 083538, 2005.
5. J. H. Stathis, J. Appl. Phys. 86 5757-5766, 1999.
6. F. Pellizzer et al., Symp. on VLSI Tech., 18-19, 2004.