Phase change mechanisms in Ge2 Sb2 Te5

Journal of Applied Physics

Volumn 102, Issue 1, 2007, Pages

  Privitera, S ^a   Lombardo, S ^b   Bongiorno, C ^b   Rimini, E ^b   Pirovano, A ^a  

^a STMICROELECTRONICS   (Italy)

^b CNR IMM   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; ANTIMONY; GERMANIUM; GRAIN GROWTH; LOW TEMPERATURE EFFECTS; NUCLEATION; POLYCRYSTALLINE MATERIALS; TELLURIUM; TRANSMISSION ELECTRON MICROSCOPY;

ANNEALING TEMPERATURE; GRAIN GROWTH RATE; PHASE CHANGE; TRANSITION RATES;

THIN FILMS;

EID: 34547228729     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2752111     Document Type: Article

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