메뉴 건너뛰기




Volumn 51, Issue 6, 2007, Pages 950-954

Investigation of phase change Si2Sb2Te5 material and its application in chalcogenide random access memory

Author keywords

Chalcogenide random access memory; Phase change; Si2Sb2Te5

Indexed keywords

AMORPHOUS MATERIALS; CURRENT VOLTAGE CHARACTERISTICS; ELECTRODES; POLYCRYSTALLINE MATERIALS; RANDOM ACCESS STORAGE; SILICON COMPOUNDS;

EID: 34250726996     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2007.03.016     Document Type: Article
Times cited : (42)

References (20)
  • 1
    • 30344457754 scopus 로고    scopus 로고
    • Cho SL, Yi JH, Ha YH, Kuh BJ, Lee CM, Park JH et al., Highly scalable on-axis confined cell structure for high density PRAM beyond 256 Mb. Symp VLSI Tech Dig, 2005. pp. 96-97.
  • 2
    • 30344435158 scopus 로고    scopus 로고
    • Ahn SJ, Hwang YN, Song YJ, Lee SH, Lee SY, Park JH et al., Highly reliable 50 nm contact cell technology for 256 Mb PRAM. Symp VLSI Tech Dig, 2005. pp. 98-99.
  • 3
    • 1242310321 scopus 로고    scopus 로고
    • Chalcogenide memory arrays: characterization and radiation effects
    • Maimon J.D., Hunt K.H., Burcin L., and Rodgers J. Chalcogenide memory arrays: characterization and radiation effects. IEEE Trans Nuc Sci 50 (2003) 1878-1884
    • (2003) IEEE Trans Nuc Sci , vol.50 , pp. 1878-1884
    • Maimon, J.D.1    Hunt, K.H.2    Burcin, L.3    Rodgers, J.4
  • 4
    • 33751550482 scopus 로고    scopus 로고
    • Burcin L, Ramaswamy S, Hunt KK, Maimon JD, Conway TJ, Li B et al., A 4-Mbit non-volatile chalcogenide random access memory. IEEE Aerospace Conference, 2005; pp. 1-8.
  • 6
    • 30344471121 scopus 로고    scopus 로고
    • Phase change memories: state-of-the-art, challenges and perspectives
    • Lacaita A.L. Phase change memories: state-of-the-art, challenges and perspectives. Solid-State Electron 50 (2006) 24-31
    • (2006) Solid-State Electron , vol.50 , pp. 24-31
    • Lacaita, A.L.1
  • 7
    • 16244410161 scopus 로고    scopus 로고
    • Low-cost and nanoscale non-volatile memory concept for future silicon chips
    • Lankhorst M., Ketelaars B., and Wolters R. Low-cost and nanoscale non-volatile memory concept for future silicon chips. Nat Mater 4 (2005) 347-352
    • (2005) Nat Mater , vol.4 , pp. 347-352
    • Lankhorst, M.1    Ketelaars, B.2    Wolters, R.3
  • 8
    • 33745635882 scopus 로고    scopus 로고
    • 2 thin film for a high-performance nonvolatile phase-change memory
    • 2 thin film for a high-performance nonvolatile phase-change memory. Jpn J Appl Phys 45 (2006) 5467-5470
    • (2006) Jpn J Appl Phys , vol.45 , pp. 5467-5470
    • Lee, J.M.1    Shin, K.2    Yeo, C.H.3    Chung, H.B.4
  • 9
    • 33744717834 scopus 로고    scopus 로고
    • Sb-Se-based phase-change memory device with lower power and higher speed operations
    • Yoon S.M., Lee N.Y., Ryu S.O., Choi K.J., Park Y.S., Lee S.Y., et al. Sb-Se-based phase-change memory device with lower power and higher speed operations. IEEE Elec Dev Lett 27 (2006) 445-447
    • (2006) IEEE Elec Dev Lett , vol.27 , pp. 445-447
    • Yoon, S.M.1    Lee, N.Y.2    Ryu, S.O.3    Choi, K.J.4    Park, Y.S.5    Lee, S.Y.6
  • 10
    • 14544287707 scopus 로고    scopus 로고
    • Switching behavior of indium selenide-based phase-change memory cell
    • Lee H., Kim Y.K., Kim D., and Kang D.H. Switching behavior of indium selenide-based phase-change memory cell. IEEE Trans Mag 41 (2005) 1034-1036
    • (2005) IEEE Trans Mag , vol.41 , pp. 1034-1036
    • Lee, H.1    Kim, Y.K.2    Kim, D.3    Kang, D.H.4
  • 13
    • 30044445537 scopus 로고    scopus 로고
    • Unravelling the interplay of local structure and physical properties in phase-change materials
    • Wełnic W., Pamungka A., Detemple R., Steimer C., Blugel S., and Wuttig M. Unravelling the interplay of local structure and physical properties in phase-change materials. Nat Mater 5 (2006) 56-60
    • (2006) Nat Mater , vol.5 , pp. 56-60
    • Wełnic, W.1    Pamungka, A.2    Detemple, R.3    Steimer, C.4    Blugel, S.5    Wuttig, M.6
  • 20
    • 0036468856 scopus 로고    scopus 로고
    • Modelling glass transition temperatures of chalcogenide glasses. Applied to phase-change optical recording materials
    • Lankhorst M.H.R. Modelling glass transition temperatures of chalcogenide glasses. Applied to phase-change optical recording materials. J Non-Cryst Solids 297 (2002) 210-219
    • (2002) J Non-Cryst Solids , vol.297 , pp. 210-219
    • Lankhorst, M.H.R.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.