In situ transmission electron microscopy study of the crystallization of fast-growth doped SbxTe alloy films

Journal of Materials Research

Volumn 20, Issue 7, 2005, Pages 1825-1835

  Kooi, Bart J ^a   Pandian, R ^a   De Hosson, J Th M ^a   Pauza, Andrew ^b  

^a UNIVERSITY OF GRONINGEN   (Netherlands)

^b Plasmon Data Systems Ltd   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS FILMS; CRYSTALLIZATION; DEPOSITION; DIELECTRIC MATERIALS; FILM GROWTH; INTERFACES (MATERIALS); MAGNETRON SPUTTERING; METALLIC FILMS; NUCLEATION; THERMAL EFFECTS; THICK FILMS; TRANSMISSION ELECTRON MICROSCOPY;

DIELECTRIC LAYER; DOPANT LEVEL; FAST-GROWTH DOPED FILMS; NUCLEATION RATE;

ANTIMONY ALLOYS;

EID: 29044442572     PISSN: 08842914     EISSN: None     Source Type: Journal    
DOI: 10.1557/JMR.2005.0228     Document Type: Article

References (17)

1. T. Ohta, N. Yamada, H. Yamamoto, T. Mitsuyu, T. Kozaki, J. Qiu, K. Hirao: Progress of the phase-change optical disk memory, in Applications of Ferromagnetic and Optical Materials, Storage and Magnetoelectronics, edited by H.J. Borg, K. Bussmann, W.F. Egelhoff, Jr., L. Hesselink, S.A. Majetich, E.S. Murdock, B.J.H. Stadler, M. Vázquez, M. Wuttig, and J.Q. Xiao (Mater. Res. Soc. Symp. Proc. 674, Warrendale, PA, 2001), V1.1.
2. G-F. Zhou: Materials aspects in phase change optical recording. Mater. Sci. Eng. A304-306, 73 (2001).
3. H. Borg, M. Lankhorst, E. Meinders, W. Leibrandt: Phase-change media for high-density optical recording, in Applications of Ferromagnetic and Optical Materials, Storage and Magnetoelectronics, edited by H.J. Borg, K. Bussmann, W.F. Egelhoff, Jr., L. Hesselink, S.A. Majetich, E.S. Murdock, B.J.H. Stadler, M. Vázquez, M. Wuttig, and J.Q. Xiao (Mater. Res. Soc. Symp. Proc. 674, Warrendale, PA, 2001), V1.2.
4. H.J. Borg, P.W.M. Blom, B.J.A. Jacobs, B. Tieke, A.E. Wilson, I.P.D. Ubbens, and G. Zhou: AgInSbTe materials for high speed phase-change recording. Proc. SPIE 3864, 191 (1999).
5. B.J. Kooi and J.Th.M. De Hosson: On the crystallization of thin films composed of Sb3.6Te with Ge for rewritable data storage. J. Appl. Phys. 95, 4714 (2004).
6. 5. J. Appl. Phys. 95, 924 (2004).
7. R. Pandian, B.J. Kooi, J.Th.M. De Hosson, A. Pauza (unpublished).
8. V.Yu. Kolosov and A.R. Thölen: Transmission electron microcopy studies of the specific structure of crystals formed by phase transition in iron oxide amorphous films. Acta Mater. 48, 1829 (2000).
9. 5 films. J. Appl. Phys. 92, 3116 (2002).
10. S. Privitera, C. Bongiorno, E. Rimini, R. Zonca, A. Prirovano, and R. Bez: Amorphous-to-polycrystal transition in GeSbTe thin films, in Advanced Data Storage Materials and Characteriztion Techniques, edited by J.W. Ahner, J. Levy, L. Hesselink, and A. Mijiritskii (Mater. Res. Soc. Symp. Proc. 803, Warrendale, PA, 2004), HH1.4, p. 83.
11. J. Kalb, F. Spaepen, and M. Wuttig: Atomic force microscopy measurements of crystal nucleation and growth rates in thin films of amorphous Te alloys. Appl. Phys. Lett. 84, 5240 (2004).
12. M.C. Morilla, C.N. Afonso, A.K. Petford-Long, and R.C. Doole: Influence of the relaxation state on the crystallization kinetics of Sb-rich SbGe amorphous films. Philos. Mag. A 73, 1237 (1996).
13. N. Ohshima: Crystallization of germanium-antimony-tellurium amorphous thin film sandwiched between various dielectric layers. J. Appl. Phys. 79, 8357 (1996).
14. 5 films studied by electrical resistance measurements. J. Appl. Phys. 87, 4130 (2000).
15. B.J. Kooi: Monte Carlo simulations of phase transformations caused by nucleation and subsequent anisotropic growth: Extension of the Johnson-Mehl-Avrami-Kolmogorov theory. Phys. Rev. B 70, 224108 (2004).
16. H.C.F. Martens, R. Vlutters, and J.C. Prangsma: Thickness dependent crystallization speed in thin phase change layers for optical recording. J. Appl. Phys. 95, 3977 (2004).
17. D.A. Porter and K.E. Easterling: Phase Transformations in Metals and Alloys (Van Nostrand Reinhold Company, New York, 1981), pp. 132-136.