Effects of γ-ray irradiation on the C-V and G/ω-V characteristics of Al/SiO2/p-Si (MIS) structures

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 266, Issue 5, 2008, Pages 791-796

  Dökme, Ilbilge ^a   Durmuş, Perihan ^b   Altindal, Şemsettin ^b  

^a AHI EVRAN UNIVERSITY   (Turkey)

^b GAZI UNIVERSITY   (Turkey)

Author keywords

ray effects; C V and G V characteristics; Interface states; Schottky diodes; Series resistance

Indexed keywords

ALUMINUM; BIAS VOLTAGE; CAPACITANCE; DOSIMETRY; GAMMA RAYS; SCHOTTKY BARRIER DIODES;

INTERFACE STATES; ROOM TEMPERATURE; SERIES RESISTANCE; V CHARACTERISTICS;

SILICA;

EID: 40949124255     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.nimb.2008.01.017     Document Type: Article

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