Proton-induced damage in gallium nitride-based schottky diodes

IEEE Transactions on Nuclear Science

Volumn 52, Issue 6, 2005, Pages 2239-2244

  Karmarkar, Aditya P ^a,b   White, Brad D ^a,c   Buttari, Dario ^a,d   Fleetwood, Daniel M ^a,b   Schrimpf, Ronald D ^a,b   Weller, Rohert A ^a,b   Brillson, Leonard J ^a,c   Mishra, Umesh K ^a,d  

^a IEEE   (United States)

^b VANDERBILT UNIVERSITY   (United States)

^c The Ohio State University   (United States)

^d University of California   (United States)

Author keywords

Gallium (Ga) alloys; Proton radiation effects; Schottky diodes

Indexed keywords

GALLIUM (GA) ALLOYS; INTERFACE DISORDER; PROTON RADIATION EFFECTS;

ELECTRON MOBILITY; INTERFACES (MATERIALS); PROTONS; RADIATION EFFECTS; SCHOTTKY BARRIER DIODES;

GALLIUM NITRIDE;

EID: 33244458695     PISSN: 00189499     EISSN: None     Source Type: Journal    
DOI: 10.1109/TNS.2005.860668     Document Type: Conference Paper

References (19)

1. S. N. Mohammad, A. A. Salvador, and H. Morkoç, "Emerging gallium nitride based devices," in Proc. IEEE, vol. 83, 1995, pp. 1306-1355.
2. L. F. Eastman and U. K. Mishra, "The toughest transistor yet," IEEE Spectrum, no. 5, pp. 28-33, May 2002.
3. X. Hu, B. K. Choi, H. J. Barnaby, D. M. Fleetwood, R. D. Schrimpf, S. C. Lee, S. Shojah-Ardalan, R. Wilkins, U. K. Mishra, and R. W. Dettmer, "The energy dependence of proton-induced degradation in AlGaN/GaN high electron mobility transistors," IEEE Trans. Nucl. Sci., vol. 51, no. 2, pp. 293-297, Apr. 2004.
4. X. Hu, A. P. Karmarkar, B. Jun, D. M. Fleetwood, R. D. Schrimpf, R. D. Geil, R. A. Weller, B. D. White, M. Bataiev, L. J. Brillson, and U. K. Mishra, "Proton-irradiation effects on AlGaN/AlN/GaN high electron mobility transistors," IEEE Trans. Nucl. Sci., vol. 50, no. 6, pp. 1791-1796, Dec. 2003.
5. 1-xN and thick GaN cap layers," IEEE Trans. Nucl. Sci., vol. 51, no. 6, pp. 3801-3806, Dec. 2004.
6. 60Co gamma irradiation effects on n-GaN Schottky diodes," IEEE Trans. Electron Dev., vol. 50, no. 12, pp. 2326-2334, Dec. 2003.
7. D. K. Schroder, Semiconductor Material and Device Characterization, 2nd ed. New York, NY: John Wiley and Sons Inc., 1998, pp. 133-266.
8. S. M. Khanna, D. Estan, L. S. Erhardt, A. Houdayer, C. Carlone, A. Ionascut-Nedelcescu, S. R. Messenger, R. J. Walters, G. P. Summers, J. H. Warner, and I. Jun, "Proton energy dependence of the light output in gallium nitride light-emitting diodes," IEEE Trans. Nucl. Sci., vol. 51, no. 5, pp. 2729-2735, Oct. 2004.
9. J. F. Ziegler, J. P. Biersack, and U. Littmark, The Stopping and Range of Ions in Solids. New York: Pergamon, 1985, vol. 1.
10. M. Hayes, F. D. Auret, L. Wu, W. E. Meyer, J. M. Nel, and M. J. Legodi, "Electrical defects introduced during high-temperature irradiation of GaN and AlGaN," Phys. B, vol. 340-342, pp. 421-425, 2003.
11. S. A. Goodman, F. D. Auret, F. K. Koschnick, J.-M. Spaeth, B. Beaumont, and P. Gibart, "Radiation induced defects in MOVPE grown n-GaN," Mater. Sci. Eng. B, vol. 71, pp. 100-103, 2000.
12. T. Mattila, A. P. Seitsonen, and R. M. Nieminen, "Large atomic displacements associated with the nitrogen antisite in GaN," Phys. Rev. B, vol. 54, no. 3, pp. 1474-1477, 1996.
13. C. W. Wang, "Neutron irradiation effect on radio-frequency magnetron-sputtered GaN thin films and Au/GaN Schottky diodes," J. Vac. Sci. Technol. B, vol. 5, no. 20, pp. 1821-1826, 2002.
14. M. Linde, S. J. Uftring, G. D. Watkins, V. Harle, and F. Scholz, "Optical detection of magnetic resonance in electron-irradiated GaN," Phys. Rev. B, vol. 55, no. 6, pp. R10177-R10180, 1997.
15. K. H. Chow, G. D. Watkins, A. Usui, andM. Mizuta, "Detection of interstitial Gain GaN," Phys. Rev. Lett., vol. 85, no. 3, pp. 2761-2764, 2000.
16. A. Ionascut-Nedelcescu, C. Carlone, A. Houdayer, H. J. von Bardeleben, J.-L. Cantin, and S. Raymond, "Radiation hardness of gallium nitride, " IEEE Trans. Nucl. Sci., vol. 49, no. 6, pp. 2733-2738, Dec. 2002.
17. H. H. Tan, J. S. Williams, J. Zou, D. J. H. Cockayne, S. J. Pearton, and R. A. Stall, "Damage to epitaxial GaN layers by silicon implantation, " Appl. Phys. Lett., vol. 69, no. 16, pp. 2354-2366, 1996.
18. S. O. Kucheyev, H. Boudinov, J. S. Williams, C. Jagadish, and G. Li, "Effect of irradiation temperature and ion flux on electrical isolation of GaN," J. Appl. Phys., vol. 91, no. 7, pp. 4117-4120, 2002.
19. B. D. White, M. Bataiev, S. H. Goss, X. Hu, A. Karmarkar, D. M. Fleetwood, R. D. Schrimpf, W. J. Schaff, and L. J. Brillson, "Electrical, spectral and chemical properties of 1.8 MeV proton irradiated AlGaN/GaN HEMT structures as a function of proton fluence," IEEE Trans. Nucl. Sci., vol. 50, no. 6, pp. 1934-1941, Dec. 2003.