Radiation defects induced by 20 MeV electrons in MOS structures

Vacuum

Volumn 76, Issue 2-3, 2004, Pages 307-310

  Kaschieva, S ^a   Todorova, Zh ^b   Dmitriev, S N ^c  

^a INSTITUTE OF SOLID STATE PHYSICS   (Bulgaria)

^b INSTITUTE OF ELECTRONICS   (Bulgaria)

^c JOINT INSTITUTE FOR NUCLEAR RESEARCH   (Russian Federation)

Author keywords

Electron irradiation; Interface states; MOS structures; Si SiO2 interface

Indexed keywords

ACTIVATION ENERGY; BORON; COMPLEXATION; CONCENTRATION (PROCESS); ELECTRON ENERGY LEVELS; INTERFACES (MATERIALS); OXIDATION; SILICON WAFERS;

INTERFACE STATES; MOS STRUCTURES; SI-SIO2 INTERFACE; THERMALLY STIMULATED CURRENT (TSC);

ELECTRON IRRADIATION;

EID: 7044253093     PISSN: 0042207X     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.vacuum.2004.07.034     Document Type: Conference Paper

References (9)

1. Kaschieva S. Nucl Instrum Methods B 1994;93:274-6.
2. Stefanov K, Kaschieva S, Karpuzov D. Vacuum 1998;51: 235-7.
3. Kaschieva S, Alexanrdova S. Nucl Instrum Methods 2001;174:324-8.
4. Kaschieva S, Dmitriev SN, Angelov Hr. Nucl Instrum Methods B 2003;206:452-6.
5. Nicholas K, Woods J. Br J Appl Phys 1964;15:783-98.
6. Shinoda K, Ohta E. Appl Phys Lett 1992;61:2691-8.
7. Konozenko D, Semeniuk K. Radiation Effect in Si. Kiev: Naukova Dumka; 1974 p. 72.
8. Vavilov V, Plotnikov A, Tkachev V. Fiz Tv Tela 1982;4:3446-9 (in Russian, English translation in Soviet Physics: Solid State).
9. Vavilov V, Plotnikov A, Tkachev V. Fiz Tv Tela 1982;4:3446-9 (in Russian, English translation in Soviet Physics: Solid State).